850nm 2W_VCSEL 

2018-06-28 17:38:53 71

850nm VCSEL Array – 2W Bare Chip(Preliminary)

Part number: CAS8502W

 

Product Description & Features

·       850nm Vertical‐Cavity Surface‐Emitting Laser array with output power of 2W

·       Very low wavelength‐temperature sensitivity

·       Chip on submount or heatsink is available upon request

·       Other wavelengths, chip dimensions, and emitter patterns are available upon request

Typical Applications

·       Gesture Recognition

·       Automotive sensing

·       Time of Flight

·       IR illumination

Electro‐Optical Characteristics

 

Parameters

Symbol

Min

Typical

Max

Units

Test Condition

Optical Output Power

POP

1.8

2

W

CW 2.75A

Threshold Current

Ith

0.6

A


Operating Current

Iop

2.75

3

A


Differential resistance

Rs

150

200

mW

CW 2.75A

Operating Voltage

Vop

2.1

2.3

V


Slope Efficiency

ηs

0.7

1

W/A

CW 2.75A

Power Conversion Efficiency

PCE

35

%

CW 2.75A

Wavelength

λpeak

840

850

860

nm


Spectral Width (RMS)

∆λ

1

nm


Beam Full Divergence (1/e2)

ϕ

22

25

28

°


Wavelength coefficient

dλ/dT

0.07

nm/°C


All tests are under CW condition with heatsink temperature 25unless otherwise   specified.


 

Typical Performance Curves at 25°C

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Mechanical Characteristics

 

Parameter

Ratings

Units

Chip Width

1035±15

µm

Chip Length

860±15

µm

Chip Height

105±10

µm

Anode Contact

Emission side, Au surface


Anode bonding pad

100 X 800

µm x µm

Cathode Contact

Backside, Au surface


    


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Absolute Maximum Ratings

 

Parameter

Conditions

Units

Operating Temperature

5 to 50

°C

Storage Temperature

‐40 to 100

°C

 

Stresses beyond the parameters listed under Absolute Maxim Ratings may cause permanent damage to the   chips.

Shipping Instruction

The unmounted chips are shipped on adhesive blue tape rings or Gel‐Pak   boxes.



图片关键词2018_03_09850nm 2W_VCSEL specsheet V2--Preliminary.pdf