940nm 1W_VCSEL

2018-06-28 17:50:13 98

940nm VCSEL Array – 1W Bare Chip (Preliminary)

Part number: CAS9401W

 

Product Description & Features

·       940nm Vertical‐Cavity Surface‐Emitting Laser array with output power of 1W

·       Very low wavelength‐temperature sensitivity

·       Chip on submount or heatsink is available upon request

·       Other wavelengths, chip dimensions, and emitter patterns are available upon request

Typical Applications

·       Gesture Recognition

·       Automotive sensing

·       Time of Flight

·       IR illumination

Electro‐Optical Characteristics

 

Parameters

Symbol

Min

Typical

Max

Units

Test Condition

Optical Output Power

POP

0.8

1

W

CW 1.2A

Threshold Current

Ith

0.25

A


Operating Current

Iop

1.2

1.5

A


Differential resistance

Rs

280

400

mW

CW 1.2A

Operating Voltage

Vop

2.1

2.4

V


Slope Efficiency

ηs

0.6

0.8

W/A

CW 1.2A

Power Conversion Efficiency

PCE

35

%

CW 1.2A

Wavelength

λpeak

935

940

945

nm


Spectral Width (RMS)

∆λ

1

nm


Beam Full Divergence (1/e2)

ϕ

22

25

28

°


Wavelength coefficient

dλ/dT

0.07

nm/°C


All tests are under CW condition with heatsink temperature 25unless otherwise   specified.


 

Typical Performance Curves at 25°C

blob.png


Mechanical Characteristics

 

Parameter

Ratings

Units

Chip Width

735±15

µm

Chip Length

735±15

µm

Chip Height

105±10

µm

Anode Contact

Emission side, Au surface


Anode bonding pad

100 X700

µm x µm

Cathode Contact

Backside, Au surface



              blob.png


Absolute Maximum Ratings

 

Parameter

Conditions

Units

Operating Temperature

5 to 80

°C

Storage Temperature

‐40 to 100

°C

 

Stresses beyond the parameters listed under Absolute Maxim Ratings may cause permanent damage to the chips.

Shipping Instruction

The unmounted chips are shipped on adhesive blue tape rings or Gel‐Pak   boxes.

 


图片关键词2018_03_30940nm 1W_VCSEL specsheet V2----preliminary.pdf