850nm 150mW_VCSEL

2018-08-23 16:32:38 229

850nm VCSEL Array – 150mW Bare Chip (Preliminary)

Part number: CAS850150MW

 

Product Description & Features

·       850nm Vertical‐Cavity Surface‐Emitting Laser array with output power of 150mW

·       Very low wavelength‐temperature sensitivity

·       Chip on submount or heatsink is available upon request

·       Other wavelengths, chip dimensions, and emitter patterns are available upon request

Typical Applications

·       Gesture Recognition

·       Automotive sensing

·       Time of Flight

·       IR illumination

Electro‐Optical Characteristics

 

Parameters

Symbol

Min

Typical

Max

Units

Test Condition

Optical Output Power

POP

120

150

mW

CW 180mA

Threshold Current

Ith

‐‐

35

50

mA


Operating Current

Iop

180

200

mA


Differential resistance

Rs

3

4

W

CW 180mA

Operating Voltage

Vop

2.2

2.4

V


Slope Efficiency

ηs

0.9

1

W/A

CW 180mA

Power Conversion Efficiency

PCE

30

35

40

%

CW 180mA

Wavelength

λpeak

840

850

860

nm


Spectral Width (RMS)

∆λ

1

1.5

nm


Beam Full Divergence (1/e2)

ϕ

21

25

29

°


Wavelength coefficient

dλ/dT

0.07

nm/°C


All tests are under CW condition with heatsink temperature 25unless otherwise   specified.


 

Typical Performance Curves at 25°C

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Mechanical Characteristics

 

Parameter

Ratings

Units

Chip Width

325±15

µm

Chip Length

325±15

µm

Chip Height

105±10

µm

Anode Contact

Emission side, Au surface


Anode bonding pad

100 X100

µm x µm

Cathode Contact

Backside, Au surface



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Absolute Maximum Ratings

 

Parameter

Conditions

Units

Operating Temperature

0 to 60

°C

Storage Temperature

‐40 to 85

°C

 

Stresses beyond the parameters listed under Absolute Maxim Ratings may cause permanent damage to the chips.

Shipping Instruction

The unmounted chips are shipped on adhesive blue tape rings or Gel‐Pak   boxes.



图片关键词2018_04_17850nm 150mW_VCSEL specsheet V2- preliminary.pdf