940nm 4W_VCSEL

2018-06-28 18:11:48 416

940nm VCSEL Array – 4W Bare Chip(Preliminary)

Part number: CAS9404W

 

Product Description & Features

·       940nm Vertical‐Cavity Surface‐Emitting Laser array with output power of 4W

·       Very low wavelength‐temperature sensitivity

·       Chip on submount or heatsink is available upon request

·       Other wavelengths, chip dimensions, and emitter patterns are available upon request

Typical Applications

·       Gesture Recognition

·       Automotive sensing

·       Time of Flight

·       IR illumination

Electro‐Optical Characteristics

 

Parameters

Symbol

Min

Typical

Max

Units

Test Condition

Optical Output Power

POP

4

W

25CW 5A

Threshold Current

Ith

1

1.5

A


Operating Current

Iop

4

5

6

A


Differential resistance

Rs

110

150

mW

25CW 5A

Operating Voltage

Vop

1.8

2.1

2.3

V


Slope Efficiency

ηs

0.8

1

W/A

25CW 5A

Power Conversion Efficiency

PCE

35

39

%

25CW 5A

Wavelength

λpeak

934

940

946

nm


Spectral Width (RMS)

∆λ

1

1.5

nm


Beam Full Divergence (1/e2)

ϕ

15

19

22

°


Wavelength coefficient

dλ/dT

0.07

nm/°C


All tests are under CW condition with heatsink temperature 25unless otherwise   specified.

Typical Performance Curves at 25°C

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Mechanical Characteristics

Parameter

Ratings

Units

Chip Width

1420±15

µm

Chip Length

1480±15

µm

Chip Height

105±10

µm

Anode Contact

Emission side, Au surface


Cathode Contact

Backside, Au surface


Absolute Maximum Ratings

 

Parameter

Conditions

Units

Operating Temperature

0 to 80

°C

Storage Temperature

‐40 to 100

°C

 

Stresses beyond the parameters listed under Absolute Maxim Ratings may cause permanent damage to the   chips.

Shipping Instruction

The unmounted chips are shipped on adhesive blue tape rings or Gel‐Pak   boxes.



图片关键词2018_05_02 940nm 4W_VCSEL specsheet V1----Preliminary.pdf