940nm 3W VCSEL

2019-02-18 10:04:19 10

940nm VCSEL Array – 3W Bare Chip

Part number: CAS9403WA

Product Description & Features

·        940nm Vertical-Cavity Surface-Emitting Laser array with output power of 3W

·        Very low wavelength-temperature sensitivity

·        Chip on submount or heatsink is available upon request

·        Other wavelengths, chip dimensions, and emitter patterns are available upon request

Typical Applications

·        Time of Flight (TOF) for 3D sensing such as gesture recognition, depth imaging, automotive sensing, etc.

·        IR illumination

Electro-Optical Characteristics

Parameters

Symbol

Min

Typical

Max

Units

Test Condition*

Optical Output Power

POP

2.7

3

W

Pulse 3.6A 50

Threshold Current

Ith

0.6

0.8

A

Pulse 50

Operating Current

      Iop

3.6

4.2

A

Pulse 50.

Differential resistance

Rs

0.2

0.4

W

Pulse 3.6A 50

Operating Voltage

Vop

2.4

2.9

V

Pulse 3.6A 50

Slope Efficiency

η_s

0.9

1

W/A

Pulse 3.6A 50

Power Conversion Efficiency

PCE

30

35

%

Pulse 3.6A 50

Wavelength

λpeak

930

940

950

nm

Pulse 3.6A 50

Spectral Width (RMS)

Δλ

1

1.5

nm

Pulse 3.6A 50

Beam Full Divergence (D86)

ϕ

17

21

25

°

Pulse 3.6A 50

Wavelength coefficient

dλ/dT

0.07

nm/°C


*All tests are under pulse condition 1000Hz, 10%D.C. with heatsink temperature 50. Mass production wafer level test condition could vary slightly. Operating current range is for reference at engineering stage in case the typical value is not ideal for module application. Within such a current range, an acceptable PCE can be maintained, though most parameters are subjected to change if operating current is different from the suggested typical value. Please refer to LIV curve in next page for typical values at wished operating current or optical power output.


Typical Performance Curves at 50°C

image.png


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Mechanical Characteristics

Parameter

Ratings

Units

Number of emitters

671

#

Emitter pitch(x)

48.5

µm

Emitter pitch(y)

28

µm

Chip Width

855±15

µm

Chip Length

955±15

µm

Chip Height

100±10

µm

Anode Contact

Emission side, Au surface

/

Anode bonding pad

100 X870

µm x µm

Cathode Contact

Backside, Au surface

/


CAS9403WA-EV012E001-04-R-D01.jpg


Chip dimension layout

image.png


Absolute Maximum Ratings

Parameter

Conditions

Units

Operating Temperature

0 to 70

°C

Storage Temperature

-40 to 85

°C

Stresses beyond the parameters listed under Absolute Maxim Ratings may cause permanent damage to the chips.


Shipping Instruction

The unmounted chips are shipped on adhesive blue tape rings or Gel-Pak boxes.  

Copyright ©Vertilite Inc.     Note: No responsibility is assumed for the use of these products. The products can emit Class IV radiation and must be operated with extreme care. Avoid directly viewing the laser beam or exposure to specular reflections. Proper eye-wear must be worn at all times when operating. VCSEL Chips are electrostatic-sensitive device and proper ESD protection is required for handling.

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