CAC940G001
Product Description &Features
• 940nm Vertical-Cavity Surface-Emitting Laser array with output power of 2W and2.35W
• Very low wavelength-temperature sensitivity
• Chip on submount or heatsink is available upon request
• Other wavelengths, chip dimensions, and emitter patterns are available uponrequest
Typical Applications
• Time of Flight (TOF) for 3D sensing such as gesture recognition, depth imaging, automotive sensing, etc.
• IR illumination
Chip dimension layout
Electro-Optical Characteristics (2.35W Output Power)
Parameters | Symbol | Min | Typical | Max | Units | Test Condition |
Optical Output Power | Pop | 2.00 | 2.35 | – | W | Pulse 2.8A 50℃ |
Threshold Current | Lth | – | 0.5 | – | A | Pulse 50℃ |
Operating Current | Lop | – | 2.8 | – | A | Pulse 50℃ |
Differential resistance | Rs | – | 180 | 400 | mΩ | Pulse 2.8A 50℃ |
Operating Voltage | Vop | 1.6 | 2.1 | 2.4 | V | Pulse 2.8A 50℃ |
Slope Efficiency | ηs | – | 1 | – | W/A | Pulse 2.8A 50℃ |
Power Conversion Efficiency | PCE | 35 | 40 | – | % | Pulse 2.8A 50℃ |
Wavelength | λpeak | 934 | 940 | 946 | nm | Pulse 2.8A 50℃ |
Spectral Width (RMS) | Δλ | – | – | 2.5 | nm | Pulse 2.8A 50℃ |
Beam Full Divergence (D86) | ϕ | 18 | 21 | 24 | ° | Pulse 2.8A 50℃ |
| Wavelength coefficient | dλ/dT | – | 0.07 | – | nm/°C | Pulse |
Parameters | Symbol | Min | Typical | Max | Units | Test Condition |
Optical Output Power | Pop | 1.8 | 2.0 | – | W | Pulse 2.5A50℃ |
Threshold Current | Lth | – | 0.5 | – | A | Pulse 50℃ |
Operating Current | Lop | – | 2.5 | – | A | Pulse 50℃ |
Differential resistance | Rs | – | 180 | 400 | mΩ | Pulse 2.5A50℃ |
Operating Voltage | Vop | 1.5 | 2.0 | 2.3 | V | Pulse 2.5A50℃ |
Slope Efficiency | ηs | – | 1 | – | W/A | Pulse 2.5A50℃ |
Power Conversion Efficiency | PCE | 35 | 40 | – | % | Pulse 2.5A50℃ |
Wavelength | λpeak | 934 | 940 | 946 | nm | Pulse 2.5A50℃ |
Spectral Width (RMS) | Δλ | – | – | 2.5 | nm | Pulse 2.5A50℃ |
Beam Full Divergence (D86) | ϕ | 18 | 21 | 24 | ° | Pulse 2.5A50℃ |
| Wavelength coefficient | dλ/dT | – | 0.07 | – | nm/°C | Pulse |
Typical Performance Curves at 50°C
Mechanical Characteristics
| Parameter | Ratings | Units |
| Number of emitters | 361 | # |
| Emitter pitch(x) | 52 | µm |
| Emitter pitch(y) | 30.5 | µm |
| Chip Width | 792±15 | µm |
| Chip Length | 680±15 | µm |
| Chip Height | 100±10 | µm |
| Anode Contact | Emission side, Ausurface | / |
| Anode bonding | 108 X610, 108 X500 | µm x µm |
| Cathode Contact | Backside, Au surface | / |
Absolute Maximum Ratings
| Parameter | Conditions | Units |
| Operating Temperature | -20 to 85 | °C |
| Storage Temperature | -40 to 105 | °C |
Stresses beyond the parameters listed under Absolute Maxim Ratings may cause permanent damage to the chips
Shipping Instruction
The modules are shipped in tape & reeling packaging or Gel-boxes.
Note: No responsibility is assumed for the use of these products. The products canemit Class IV radiation and must be operated with extreme care. Avoid directly viewing the laser beam or exposure to specular reflections. Proper eyewear must be worn at all times when operating. VCSEL Chip in the modules are electrostatic-sensitive device and proper ESD protection is required forhandling.
